High-performance MoS2 transistors with low-resistance molybdenum contacts

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

The development of low-resistance source/drain contacts to transition-metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band o...

High-Performanc with R

Recently, Molybdenum Disulphide (MoS2) promising candidate for low-power digital appli to monolayer (1L) MoS2, few-layer MoS2 (FL-M due to its higher density of states (DOS). Howeve study of FL-MoS2 field-effect-transistor (FET) paper, we report a high-performance FL-MoS2 FE contact resistance (~0.8 kΩ.μm) that is close to t silicon contacts in CMOS technology. A cor performance and the number ...

Supporting Information for Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.

Ultrathin molybdenum disulphide (MoS2) has emerged as an interesting layered semiconductor because of its finite energy bandgap and the absence of dangling bonds. However, metals deposited on the semiconducting 2H phase usually form high-resistance (0.7 kΩ μm-10 kΩ μm) contacts, leading to Schottky-limited transport. In this study, we demonstrate that the metallic 1T phase of MoS2 can be locall...

Selective and localized laser-anneal effect for high-performance flexible multilayer MoS2 thin-film transistors

We report enhanced performance of multilayer MoS2 field effect transistors (FETs) on flexible plastic substrates with ultra‐short, pulsed‐laser annealed Ti/Au contacts without thermal damage. An analysis of the temperature distribution, based on finite difference methods, enabled understanding of the compatibility of our picosecond laser annealing for flexible PEN substrate with low thermal bu...